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High vacuum depositon
With the help of modern high vacuum- PVD- equipment we are able to deposit
flat and non-flat substrates with metallic, semiconductive or insulative
materials in small and midle series production.
PVD-deposition is especially suitable for:
- metalize of ceramic, e. g. for
conductive lanes and electrical contacts
- metalize of glass, e. g. for
solderable connections
- deposition of foils, e. g. for
electrically conductive films
The maximum size of substrats is 8 x 8 cm
2 and up to 6 substrates can be deposited in each deposition cycle.
The following deposition methods
are available:
- dc-magnetron-sputtering, e. g.
for CrNi, Ni, Mo, W
- rf-magnetron-sputtering, e. g.
for SiO2
- thermal evaporation, e. g. for
Au, Ag, Al
- flash-evaporation for chemical
compounds and alloys
There are also extensive measuring techniques
to accompany the production process, e. g. determination of film thickness,
optical, mechanical and elektrical properties, for the quality management.
All substrates can be treated before
deposition in situ for surface cleaning with inverse sputtering
etching. This pretreatment ensure good sticking properties of the thin
films on the substrates.
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